EBL_Electron Beam Lithography Equipment_2 LOTS
key details
| Status | active |
|---|---|
| Category (CPV) | 38000000 |
| Region | East Midlands |
| Deadline | 21 Jan 2016 |
| Contract start | 18 Apr 2016 |
| Contract end | 29 Jul 2016 |
| Procedure | open |
| SME suitable | No |
| OCID | ocds-b5fd17-2a1f7cc4-adc9-11e6-9901-0019b9f3037b |
description
EBL Instrument (Lot1) and Lithography Data Prep System (Lot2)
LOT1: The electron beam lithography (EBL) instrument requires both high performance and high reliability. Examples of key research goals include:
| 1. | Patterning novel resists including self-assembled monolayers (SAMs) on glass or semiconductor substrates by direct writing onto the SAM with an electron beam. |
| 2. | Writing photonic crystals and optical waveguides on III-V semiconductor heterostructures such as GaAs/AlGaAs. |
| 3. | Writing leads onto 2D materials such as graphene and InSe. |
| 4. | Nano-electronic devices in GaAs/AlGaAs heterostructures. |
| 5. | Spintronic devices consisting of thin metal layers deposited by sputtering onto semiconductor devices. |
| 6. | Nanomechanical devices made from silicon nitride on silicon. |
These applications are scientifically challenging and we require an instrument that writes high fidelity patterns with flexible exposure parameters and excellent resolution and overlay capabilities.
Tender Lot# 2: Lithography data preparation system
Ensuring the maximum throughput of world-leading scientific devices from the lithography tool is very important to us. Therefore it is important that the exposure control of the patterns is calculated correctly. In an ideal world we would hope that the patterns would be exposed correctly first time. This usually means that the resist and substrate need to be modelled in a computer to calculate the proximity correction. This correction might be to the shape of the pattern and/or the exposure of the pattern. As an example consider a ‘bow-tie’ pattern written into a positive electron beam resist on a GaAs substrate consisting of two equilateral triangles of side length 200nm which are separated at one of their vertices by 20nm. To provide an accurate spacing of 20nm and maximum contrast in the resist, the exposure parameters have to be optimised.
We are therefore inviting tenders for software tools which will help us maximise the throughput and fidelity of the patterns.
We welcome tenders from both electron beam lithography tool suppliers and third parties.
EXPRESSIONS OF INTEREST CLOSE: 21 JANUARY 2016
To EXPRESS INTEREST:
Please first register on the eTendering system then Login and go to Tenders.
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Additional information: TENDERERS MUST EXPRESS THEIR INTEREST THROUGH FIRST REGISTERING ON THE UNIVERSITY`S E-TENDERING SYSTEM https://in-tendhost.co.uk/universityofnottingham/
Non-compliant expressions of interest (EOI) will not be considered or acknowledged. The university reserves the right to cancel the tender process at any stage. The University does not accept any liability for any costs incurred in tenderingEXPRESSIONS OF INTEREST CLOSE: 21 JANUARY 2016
To EXPRESS INTEREST:
Please first register on the eTendering system then Login and go to Tenders.
Find the project scroll down to View Details and then scroll down to the Express Interest` button at the foot on the right hand side.
NOTE: To make sure you receive our email notifications. to ensure our emails reach your inbox please add our email domain @in-tend.co.uk to your safe senders list and check your spam filter settings..
Once you have registered, log-in and go to Current Tenders/view printable details, then expressed interest in the project.
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Is a Recurrent Procurement Type? : No https://in-tendhost.co.uk/universityofnottingham/aspx/
documents
- https://in-tendhost.co.uk/universityofnottingham/aspx/ , tenderNotice
- https://www.contractsfinder.service.gov.uk/Notice/ac5d403e-4a74-47ff-982f-b108f32640fe , tenderNotice
Documents are linked, not mirrored. They are served by the publishing authority and may require registration.
notice history
1 notice published against this procurement.
| Published | Type | Regime | Notice |
|---|---|---|---|
| 18 Nov 2016 | Tender (tender) | · | ac5d403e-4a74-47ff-982f-b108f32640fe-83887 |
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source
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